Xe-doped Y-Ba-Cu-O films were deposited on p-type (100)-oriented Si wafers by sputtering YBa3Cu5Ox targets by 3 keV Xe+-beams. The deposited thin films were annealed in O-2 at temperatures of 100-300 degrees C for 48 h. Many of Xe atoms still remained in the thin films annealed at 200 degrees C. The lattice constant of YBa2Cu3Ox in the thin films was smaller than that in the ASTM cards. Their resistivities started to decrease at 280-300 g and became very small values at 100-140 K.