We intend to use diamond film as sensors for pressure, strain and acceleration. For this purpose, a new process was developed to produce a bridge structure of diamond film using sacrificial layer etching and selective growth by ion implantation. The size of the bridge made by this process is 240 X 420 mu m(2) and the thickness is about 3.5 mu m Bending displacement of the bridge under various loads between 1 mgf and 40 mgf is studied. The maximum displacement is proportional to the load and is about 0.2 mu m at 40 mgf loading. As a result, Young’s modulus of the diamond film is estimated to be about 1000 GPa.