One of the major problems hindering the application of porous Si to electroluminescent devices is the high resistance of the electrode/porous Si contact. To overcome the problem, we anodized the alloyed Pt/Si contacts to form porous alloyed Pt/Si contacts and studied the chemical compositions and photoluminescence (PL). The porous alloyed Pt/Si contact exposed to the 488 nm line of the Ar ion laser light exhibits red-light emission (600-800 nm). The composition of the contact strongly depends on the alloying temperature, The PL spectra are similar to that of porous Si without Pt, and the peak wavelength is affected by the annealing process. However, the PL intensity is lower than that of porous Si without Pt. This is either due to the subsurface layer with the Pt,Si phase keeping the Si layer underneath From being anodized or keeping the emitted light from coming out of the surface. The I-V characteristic of the porous alloyed Pt/Si contact demonstrates a good ohmic contact with a low contact resistance.