The effect of halide ions on the formation and dissolution behaviour of zirconium oxide was studied using galvanostatic and capacitance techniques. Increase of F- ion concentration and temperature restrict the oxide film growth and increase the average rate of dissolution of zirconium oxide. The Cl- ion causes a localized attack on zirconium during oxide formation and dissolves the oxide to some extent. The Br- ion has an appreciable attack on the oxide film formation and dissolution, while I- ion has a very low effect on both the formation and dissolution process of zirconium oxide. Oxide film formed at a high formation voltage was found to be more defective than that formed at a lower one.