Semiconducting Bi2S3 thin films were prepared on glass substrates from non-aqueous media using spray pyrolysis. Characterization of the films was carried out using X-ray diffraction, scanning electron microscopy, optical absorption and dark resistivity techniques. These studies reveal that as-deposited films are polycrystalline, having an optical band edge (direct) of 1.92 eV. The electrical resistivity is of the order of 10(6) Ohm cm.