Thin films of amorphous InO were produced by thermal vapor deposition of InO powder in vacuum (P = 10(-5) Torr) at room temperature onto glass substrates. A potential difference in the range of 0-110 V DC was applied to the sample during deposition. The effect of the applied voltage on the him conductivity was monitored by the current through the him. The him mass increase was linearly proportional to the deposition time (5-6 min). A non-linear increase of the current of several orders of magnitude was observed. The film resistance was measured in the range 100-10(8) Omega. To explain the experimental data it was hypothesized that when the voltage across the sample is applied tunneling and percolation are responsible for the growing film conductivity. The variation of the characteristic parameters of tunneling and percolative conductance with the applied voltage were derived by fitting the dependence of the current on the voltage with analytical expressions corresponding to tunneling conductance al the initial phase of the coating process, followed by percolative conductance. It was found that the transition from tunneling conductance to percolative conductance takes place at earlier times as a function of the applied voltage, and that the critical percolation exponent increases with the applied voltage.