The growth of a diamond film with {100}-oriented texture on Si substrates (1 x 1 cm(2)) has been achieved by a three-step process (carburization --> nucleation --> growth) in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. We employed a cyclic technique in the nucleation step together with the various etching time intervals in the cyclic process, The properties of the diamond film were found to be strongly dependent on the etching time interval in the cyclic process. After the nucleation step, we investigated in detail the state of the sample surface. Based upon these results, we discuss the effect of etching time interval on the properties of diamond films, particularly on the {100}-oriented texture growth.