Crystal orientation and residual stress development in AIN films deposited on borosilicate glass (the thermal expansion coefficient of which is nearly equal to that of AIN) substrates were investigated by X-ray diffraction method. The AIN films were prepared by a conventional planar magnetron sputtering system with a plasma protection net under the condition of constant substrate temperature and various nitrogen gas pressures between 0.8 Pa and 13 Pa. We found that the residual stresses show the same qualitative tendency against the nitrogen gas pressure independent of the use of the plasma protection net. Large tensile residual stress was observed at high nitrogen gas pressure and large compressive residual stress was observed at low gas pressure. When the plasma protection net was used, residual stresses in the AIN him were shifted to the compressive side.