Diamond-like atomic-scale composite (DLASC) films deposited on (100) Si were studied by means of charge deep-level transient spectroscopy (Q-DLTS) and ellipsometry. Two peaks in the continuous spectrum of trapping centers were discriminated by the Q-DLTS technique : from the centers localized on the film-Si interface and from the centers localized in the film. The dependence of their parameters an deposition conditions, thermal and radiation treatment was established. The Q-DLTS results correlate well with that obtained by positron annihilation spectroscopy.