This study concerns junctions obtained by the deposition of an in-situ boron-doped film of polysilicon on an N-type monosilicon substrate. The deposition was carried out at a temperature of 560 degrees C in an industrial reactor using low-pressure chemical vapor deposition. Wafers with a polysilicon film of 550 Angstrom and 3000 Angstrom thickness were fabricated and annealed under different conditions. To localize the junction in the structure, the boron distribution, before and after annealing, was determined by secondary ion mass spectrometer measurements. Current-voltage and capacitance-voltage characteristics were measured and analysed to identify the dominant mechanism of conduction in such structures. The different measurements were carried out at a temperature ranging between 299 K and 400 K.