p- and n-type CuInSe2 thin films were grown from close-spaced vapour transport in a vertical closed tube. The electrical conductivity variation of the films from p- to n-type was obtained by a simple adjustment of the source and substrate temperatures during the growth. The depositions were carried out in the temperature range where the films are nearly stoichiometric (approximate to 400 to 580 degrees C). The films were characterized by X-rays, scanning electron microscopy, energy dispersive spectroscopy, optical absorption and Hall effect studies.