We report on a Monte Carlo analysis of a SiGe p-channel 0.18 mu m MOSFET. This work emphasizes the influence of the Ge channel profile on device performances. A uniform Ge profile with 0.3 Ge mole fraction provides a good hole confinement in the channel, with a reduction of the surface scattering at oxide interface and an improvement of the hole transport properties in SiGe. A graded Ge profile (0% at the bottom of the channel to 30% at the top) provides a further improvement due to the hole confinement closer to the gate. A better gate-control of the drain current is achieved leading to an increased transconductance, a reduced drain-induced-barrier-lowering, a reduced subthreshold slope, and a better saturation behavior.