The electron cyclotron resonance plasma-enhanced chemical vapor deposition method is used to prepare ferroelectric PbTiO3 films. Single-phase perovskite PbTiO3 films are successfully fabricated on Pt/Ti/SiO2/Si and Pt/SiO2/Si substrates at temperatures of 390-530 degrees C using metal-organic (MO) sources. When the deposition temperature is sufficiently high (above 500 degrees C), lead titanate him has a stoichiometric composition independently of the MO source supply ratio. Whereas the deposition temperature is low (below 450 degrees C), the composition and, in turn, the structure are depended on the source supply ratio. With adequate MO source ratio, stoichiometric perovskite PbTiO, film can be obtained at a temperature as low as 390 degrees C. The variations of preferred orientation, degree of c-axis orientation and film morphology with process temperature, MO source supply ratio and substrate are also examined.