Polycrystalline silicon (poly-Si) thin films were grown by plasma-enhance CVD from fluorinated precursors on glass substrate by two-step growth (TSG), i.e. (1) growth of seeds on glass and (2) epitaxial-like growth on the seeds. The seed crystal with high crystallinity was grown by layer-by-layer technique. An optimum condition to promote epitaxial-like growth on the seeds having a certain texture was also found by varying the mixing ration of source gases, SiF4 and H-2, under the real time observation with a spectroscopic ellipsometer (SE). Smooth interface on atomic scale between the seeds and the layer grown epitaxial-like made by TSG was established by measurements with SE and SIMS. High spectral response obtained in a fully poly-Si p-i-n diode proves that high quality poly-Si is able to be grown on glass by TSG.