The quality of polysilicon obtained from the crystallization of amorphous silicon films deposited by the low pressure chemical vapor deposition technique (LPCVD) in classical furnace, is known to be high. TFT’s fabricated from this material show a field effect mobility greater than 60 cm(2) V-1 s(-1). To improve this quality, single shot very large excimer laser crystallization of LPCVD films is studied using characterization techniques such as atomic force microscopy observations, X-ray diffraction, Hall mobility measurements and spectroscopic ellipsometry. Undoped, highly phosphorous and boron doped, amorphous and crystallized deposited films are used to give a large overview about the possibilities of this crystallization technique. Film properties are continuously improved when the laser fluence increases. AFM shows an excellent uniformity of the film whatever the laser fluence. However, a sudden degradation happens above a fluence value. This degradation is owing to cracks certainly induced by the mismatch of thermal expansion coefficients of the substrate and the film.