For the formation of PS dielectric filters a detailed calibration of the etch rates and refractive indices is required. The effective dielectric function of PS was determined for different substrate doping levels as a function of the anodization current density by fitting reflectance spectra. Based on these results a number of different dielectric filters were realized. For device applications a thermal oxidation step is necessary to reduce aging effects which occur as a result of the native oxidation of PS. In addition, thermal oxidation results in a qualitatively improve filter performance due to a reduced absorption in the PS layers. Therefore the dielectric functions of PS oxidized in dry O-2 at temperatures up to 950 degrees C were determined. A continuous variation of the porosity and hence the refractive index with depth was used to realize so-called rugate filters. This type of interference filter allows the design of structures with more complex reflectance or transmittance characteristics than structures consisting of discrete single layers.