화학공학소재연구정보센터
Thin Solid Films, Vol.297, No.1-2, 277-280, 1997
Porous Silicon Diodes Operated Near the Electroluminescence Threshold
Transient behavior and the onset voltage of the electroluminescence (EL) has been measured for a porous silicon light-emitting diode (PSi LED). Diodes were fabricated by anodization of the pn diode structure with contacts realized by deposition of gold pads. Higher onset voltages of the EL have been found for samples with shorter peak wavelengths. This is attributed to higher injection barriers for those samples, in agreement with a smaller expected average crystallite size. A red-shift of the EL is observed at the voltages near the EL threshold and an EL mechanism based on exciton generation is suggested.