Indium antimonide films were grown by the hot wall epitaxy technique onto KCl substrate kept at different temperatures. The experimental deposition conditions are optimized. The electrical resistivity, Hall mobility and carrier concentration as a function of temperature have been determined. Observations reveal that the films appear to be p-type and show comparatively higher mobility when deposited at 553 K. Transmission electron micrographs of these films indicate grains of hexagonal shape. Crystallites as large as 0.25 mu m are obtained. The optical gap of 0.045 eV for indium antimonide films has been observed.