InSb epilayers were grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). The surface and subsurface morphologies of InSb epilayers were observed by scanning electron microscopy (SEM) and scanning electron acoustic microscopy (SEAM), and the crystalline properties were characterized by the single-crystal X-ray diffraction pattern and double-crystal Xray rocking curve. Two types of crystalline state after the release of the large compression stress, one was homogeneous dislocation array and the other was heterogeneous plastic flow, were observed and discussed.