An epitaxial CoSi2 thin film was grown from a 20 nm Co/5 nm Ti bilayer by rapid thermal annealing (RTA) at 900 degrees C and subjected to BF2+ implantation followed by a second RTA at 900 degrees for the formation of shallow p(+)-n junction. The B distribution studied by secondary ion mass spectrometry was dependent upon the as-deposited B profile. For the 30 keV, 10(15) cm(-2) implanation, the as-deposited B concentration at the CoSi2/Si interface was 10(17) cm(-3) and the shallow junction of 35 nm depth was formed after 300 s anneal. For the 50 and 80 keV implantation, the interfacial concentration was higher than 10(18) cm(-3) and the shallow junctions of 60 and 100 nm depth was formed after 60 and 10 s. anneal. respectively.