Laser wavelength has important effects on the crystalline properties of yttria stabilized zirconia (YSZ) films deposited on Si(100) by KrF and ArF excimer laser ablation. While KrF-deposited films have been found to be epitaxial on Si(100), only textured films can be obtained with ArF over wide pressure and temperature ranges. Studies on YSZ ablation showed that the deposition rate could be the main difference between the depositions with these wavelengths under the same conditions. The KrF deposition rate was reduced to the same level as ArF by changing the laser fluence and spot size, but the change had no effects on the films. Crystal quality decreases with film thickness, but the film texture and in-plane orientation ([100](YSZ)parallel to[100](Si)) do not depend on this parameter. Laser repetition rate was found to affect film properties. Best results are obtained at high repetition rates (over 10 Hz), while polycrystalline samples grow at 1 Hz. This behaviour is most probably related to YSZ degradation by exposure to high temperature.