The rapid thermal annealing of Ti films on silicon in a nitrogen atmosphere seems to be a very promising method to obtain the Si/TiSi2/TiN structure. We have tried to increase the final nitrogen content (i.e. TiN thickness) by incorporating nitrogen during the deposition of the initial Ti films, The influence of the nitrogen present in the titanium film on the silicidation process has been studied by comparison with the silicidation of pure titanium. The evolution of the nitrogen content with thermal treatment conditions has been established by nuclear reaction analysis (NRA), The nitrogen initially incorporated in the Ti film plays a passive role during the nitridation process, since its initial presence does not strongly influence the further incorporation of nitrogen from the atmosphere. The final nitrogen content of the N-doped samples is the addition of the nitrogen incorporated from the atmosphere during the thermal treatment in pure titanium samples and the nitrogen incorporated during deposition. The silicidation process has been studied using complementary techniques. The sheet resistances, Rutherford backscattering spectra and grazing X-ray diffraction (GXRD) diagrams have allowed us to establish the evolution of the reaction. Silicidation is not affected by the nitrogen incorporated during deposition. No differences have been found due to the presence of nitrogen. Nevertheless, changes in the surface morphology were found by atomic force microscopy (AFM). The Ti(N-2) samples are characterized by lower root mean square (rms) surface roughness values and different features.