A YBa2Cu3O7/NdAlO3/YBa2Cu3O7 trilayer was grown on (100) MgO substrate by pulsed laser deposition. A SrTiO3 capping layer was used on the YBCO underlayer, which enabled growth of thick NdAlO3 dielectric layers with smooth surfaces. Layer-by-layer growth was verified by RHEED and AFM. The transition temperatures of the over-and underlayer were 91 K, with critical currents of 1.5 X 10(6) and 1.0 X 10(6) A/cm(2) at 77 K, respectively. The capacitance of trilayer capacitors scaled linearly with pad area, from which the relative dielectric constant of the NdAlO3, thin film was estimated to be similar to 21. The resistivity of the dielectric was measured to be 10(7) Omega cm at 77 K.