Thin Solid Films, Vol.306, No.2, 205-213, 1997
UHV reflection electron microscopy investigation of the monoatomic steps on the silicon (111) surface at homo- and heteroepitaxial growth
Processes of epitaxial growth have been investigated in situ by using ultra-high vacuum reflection electron microscopy (UHV REM). The evolution of surface morphology during cleaning treatments and homoepitaxial growth in the mode of two-dimensional nucleation is visualized. Consecutive images of the growth of Ge pseudomorphic film on the Si(111) substrate are presented including the stage of three-dimensional nucleation. Two types of specific areas were found around three-dimensional islands.
Keywords:HEATING CURRENT;PHASE-TRANSITION;SI SURFACES;CRYSTAL-SURFACES;SI(111) SURFACE;CLEAN SI(111);1X2 DOMAINS;SI(001) 2X1;SUBLIMATION;TRANSFORMATIONS