The electronic properties of silicon films deposited by filtered cathodic vacuum are (FCVA) from silicon cathodes have been studied and correlated with growth conditions. Films with the best electrical properties were deposited at elevated temperature and low background pressure of hydrogen. Room temperature photo-conductivities of around 10(-6) (Omega cm)(-1) were measured at AM1 illumination. Unstable are operation and re-triggering of the are during deposition resulted in films with the highest defect densities, indicating that the defects are due, at least in part, to sputtered impurity atoms. Calculations supporting this suggestion are presented and measures to reduce the levels impurities are discussed.