Boron nitride films are synthesized by rf magnetron sputtering baron targets where the deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are analyzed using Anger electron spectroscopy, transmission electron microscopy, nanoindentation, Raman spectroscopy and X-ray absorption spectroscopy. These techniques provide characterization of film composition, crystalline structure, hardness and chemical bending, respectively. Reactive, rf-sputtering process parameters are established which lead to the growth of crystalline boron nitride (BN) phases. The deposition of stable and adherent baron nitride coatings consisting of the cubic phase requires 400 degrees C substrate heating and the application of a 300-V negative bias.