화학공학소재연구정보센터
Thin Solid Films, Vol.308-309, 538-542, 1997
CMP CoO reduction : slurry reprocessing
Initial results of chemical mechanical planarization (CMP) of 8 inch diameter thermal oxide (TOX) and TEOS sheet film semiconductor wafers using CMP slurry that have been reprocessed are presented. The slurry is reprocessed in an on-line system that has been fitted onto an IPEC Planar model 472 CMP system. Slurry consumption during the testing was at one-fifth of normal CMP slurry consumption for the system. CMP results showed no differences between wafers polished with 100% fresh slurry and those polished with reprocessed slurry.