The edge of silicided junctions has been confirmed as a major source of leakage in very shallow junction devices with cobalt silicide. The leakage was not correlated proportionally with the size of the junction, but primarily dominated by edge leakage. This edge leakage was further demonstrated by using an overhang structure. A partial reaction method for silicide processes was found to be very beneficial. A leakage current of about 10 nA/cm(2) for P+N junctions with junction depths shallower than 150 nm was achieved.