화학공학소재연구정보센터
Thin Solid Films, Vol.310, No.1-2, 167-170, 1997
Characterization of fluorine-doped silicon dioxide film by Raman spectroscopy
We have measured Raman spectra of fluorine-doped SiO2 (SiOF) films and quartz glass. From a comparison between Raman spectra of the SiO2 film and quartz glass, it has been found that the SiO2 film is under compressive stress and that it has more threefold ring defects than quartz glass. Raman bands from threefold and fourfold ring defects in SiOF firms become week as the fluorine/oxygen (F/O) ratio increases and as the stress decreases. The decrease of intensities of these Raman bands shows that ring defects in SiOF films decrease as the F/O ratio increases and as the stress decreases. The triply degenerated omega(4) mode at 460 cm(-1) becomes sharp as the F/O ratio increases and as the stress decreases. Furthermore, the peak-frequency of omega(1) mode around 820 cm(-1) decreases with a decrease of stresses whereas that of omega(3) mode around 1065 cm(-1) increases. These results can be well understood in terms of a decrease of O-Si-O bonding angle caused by relaxation of stresses.