Thin Solid Films, Vol.311, No.1-2, 259-261, 1997
Photovoltage properties of semiconductor LB films on n-Si substrate in contact with metal electrode
Photovoltage properties of multilayer Langmuir-Blodgett (LB) films of corbathiene (similar to 100 nm thick) on the n-Si substrate with semitransparent top gold electrode have been investigated. Measurements of photovoltage dependence on wavelength and intensity of exciting light have been performed. The photovoltage values attaining 0.4 V are well reproducible when subjected to illumination of intensity up to 10(14) photons cm(-2) s(-1) in the wavelength range 300-900 nm. The results are related to the major role of the film/substrate interface and to the films optical absorption features.
Keywords:LANGMUIR-BLODGETT-FILMS