The laser chemical vapor deposition (CVD) using dichloromethyl phenylsilane as a monomer gave a polysilane film on a substrate. The micropatterns of the polysilane with the resolution of about 300 mu m were formed by laser projection CVD through a photomask. The silylene was observed by laser flash photolysis of dichloromethyl phenylsilane as a transient intermediate during the photochemical reaction. The transient absorption spectrum and the molecular orbital (MO) calculation suggest the formation of the methylphenylsilylene by the cleavage of the Si-Cl bond of the dichloromethylphenylsilane. The elemental composition by XPS spectra showed the higher Si:C ratio of the polysilane film compared to the monomer, which implies the existence of the silicon network structure. The time-resolved emission spectra of the polysilane film were similar to that of the network polysilane. The optical band gap of polysilane film was decreased with increasing laser excitation power.