Low field and high field DC conductivity measurements have been made on macroporous p-type porous silicon (PS) samples prepared bg anodic dissolution. The conduction mechanism is found to be due to Variable Range Hopping near the Fermi level for temperature below 150 It. At high temperatures the conduction is due to the tunneling of carriers in the localized states in the band edges near the valence band. The analysis of the data shows that PS presents a fractal structure between 1D and 2D systems.