In this paper, SnO2 thin films doped with Sb, In, Pd and Pt were prepared by the Sol-Gel technique. The influence of the dopants on the electronic structures of SnO2 film was studied using X-ray photoelectron spectroscopy (XPS). It was observed that the dopants shifted the binding energies of the Sn3d and Ols orbitals, which was possibly caused by the changes of the Fermi level of the SnO2. The changes of the Sn M4,5N4,5N4,5 Anger line shapes of doped SnO2 films demonstrated the influences of the dopants on the distribution of the electron state density of Sn 4d orbital.