We investigated the structural change of TiN/Ti/thick SiO2 multilayers as a function of annealing temperature by X-ray diffraction (XRD), transmission electron microscopy (TEM), and secondary ion mass spectroscopy (SIMS). XRD analysis and N concentration profiles determined by SIMS showed that the initial Ti(002) film changes to TiN (111) at annealing temperatures higher than 450 degrees C. TEM observations revealed that the interface between TiN and Ti become less distinct at annealing temperatures higher than 450 degrees C, and we found an amorphous layer at the interface between the Ti and the SiO2 layer. The O concentration profile determined by SIMS suggested that this layer was mainly TiOx.