Phonon-suppressed indirect-gap radiative recombination was observed from a type-II Ge/Si dot grown by gas source molecular beam epitaxy (MBE). The phonon suppression occurs due to the formation of an electronic dot and the phononless k-diagonal Delta(1,c) - Gamma(25',v) interband recombination of three-dimensionally confined excitons is understood in the context of the elimination of momentum conservation. The dot confinement is established by large self-organized Stranski-Krastanow dots and the interface trapping due to hole space charge. The dot characteristics were confirmed by detailed measurements and the electronic dot precursor was found near the growth mode transition.