Quantum wires are conventionally realised with either high resolution lithography or with a complex process sequence involving many critical steps. In this work we report, for the first time, realisation of quantum wire transistors at locally grown edges, using molecular beam epitaxy (MBE) through micro shadow masks. This method does not require high resolution lithography and simplifies the fabrication process. The fabricated devices were electrically characterised at room temperature and at liquid helium temperature for different applied magnetic field strengths. Oscillations are observed in the input characteristic at liquid helium temperature. The magnetic field dependence of these oscillations and Shubnikov-de Haas oscillations indicates, that quantum wires with an effective width of 50 nm are realised due to field effect at the locally grown edges.