Previously, atomic hydrogen has been shown to be effective in reducing the segregation of Ge on Si(100) during solid source molecular beam epitaxy growth. In this work we have investigated atomic hydrogen to determine if it is equally effective in reducing the segregation of Sb on Si(100). Using secondary ion mass spectrometry, we demonstrated that the co-deposition of atomic hydrogen during Sb doping of Si at 500 degrees C reduced the surface segregation ratio by greater than two orders of magnitude. However, if atomic hydrogen was applied for more than 20 nm of growth, extended defects were formed. In addition, the as-grown Sb-doped layers had a low percentage of electrical activation as measured by capacitance-voltage profiling.