We characterize SiGe strained heterostructures grown by molecular beam epitaxy (MBE) using a Si effusion cell which can be used at high temperatures up to 1700 degrees C instead of an electron beam gun conventionally used in solid-source Si MBE. Photoluminescence is clearly observed from a Si/SiGe quantum well grown on a Si(001) substrate using the Si effusion cell. This indicates that the sample grown with the Si effusion cell is of good quality. It is found from X-ray diffraction measurement of a Ge/Si strained-layer superlattice grown on a Ge(001) substrate that good controllability of the growth rate can be realized by using the Si effusion cell. Optical transitions observed in the photoreflectance spectrum of the Ge/Si strained layer superlattice agree with the Kronig-Penny model calculation taking account of the non-parabolicity of the conduction band.