A hot-wall technique is employed to deposit C-60 films on synthetic fluorophlogopite and silicon substrates. X-ray diffraction results show that with increasing substrate temperature from 433 to 473 K, well(111) oriented films are deposited on fluorophlogopite (001) substrate. Films on silicon (100) are polycrystalline with relatively large grains, and their quality improves with substrate temperature as well. In addition, measurements indicate that incorporation of helium gas of 2.667 x 10(-2) Pa during deposition leads to a larger portion of (311) oriented grains and smaller coherent length for C-60 films on fluorophlogopite. Nevertheless, the (111) planes of (111) oriented C-60 grains are almost perfectly aligned and excellently parallel to the substrate surface. Moreover, the formation of larger crystal grains on silicon with a preferable(111) orientation occurs with introducing helium gas. Hot-wall, substrate type, temperature, and helium gas effects on film growth are discussed.