화학공학소재연구정보센터
Thin Solid Films, Vol.315, No.1-2, 263-265, 1998
Room temperature photoluminescence from erbium-doped silica thin films prepared by cosputtering
The Er3+ ions were dispersed in silica matrix by rf magnetron cosputtering of silica and erbium oxide. Photoluminescence of Er3+ centered at 1.534 mu m has been detected at room temperature as excited by a Nd-YAG laser line at 1.064 mu m. The photoluminescence intensity is proportional to the annealing temperature. We believe that it is due to more radiative centers reaching Er3+ upon annealing. Besides the main peak at 1.534 mu m, an additional peak at 1.522 mu m was observed, which is considered to result from the Raman response of surface hydrogen bonds.