Si1-xCx alloys were grown on silicon substrates by rapid thermal process/very low pressure chemical vapor deposition (RTP/VLP CVD). The growth rate is about 0.4 nm/min within the critical thickness and 1.4 nm/min beyond the critical thickness. Atomic force microscope (AFM) investigation on different samples indicated that the surface roughness is proportional to the growth rate and reverse proportional to the mass flow ratio of SiH4 to C2H2. This result will provide useful information on the material growth condition. The Raman spectrum study indicated the strain in Si1-xCx layer and the substitutional C was confirmed by the observation of the peak at 960 cm(-1). The bandgap of the Si1-xCx layer was studied by making Schottky contacts on the Si1-xCx samples. The barrier height reduction on the strain sample can be attributed to the effect of C incorporation.