Thin (about 300 nm and less) HgCdTe and CdTe films have been deposited on Si flat and anisotropically etched microrelief surfaces by YAG:Nd3+ pulsed laser at various substrate temperatures in the range from 323 K to 423 K with 100 laser shots. These films and HgCdTe/Si heterosystems were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and current-voltage characteristics (CVC) analyses. It has been shown that under above conditions laser layer deposition method forms polycrystal films of CdTe, CdHgTe both for microrelief and flat Si substrates in the low temperature range