The results of a study of the temperature dependence of current transport in Pd/LB-film/n-Si diodes are presented. The current-voltage (I-V) characteristics are found to display strong temperature dependence for reverse and low forward bias. Such behaviour is not expected for a majority carrier Schottky diode. It is suggested that these structures are minority carrier tunnel diodes in which semiconductor related current transport plays an important role in determining the device I-V characteristics. At, high forward bias the current is tunnel limited.