Thin Solid Films, Vol.332, No.1-2, 21-24, 1998
Deposition of tungsten thin films by dual frequency inductively coupled plasma assisted CVD
A new inductive plasma reactor has been developed for coating complex tri-dimensional parts using the plasma enhanced chemical vapor deposition (PECVD) Technique. In order to control independently the temperature of the parts to be treated, induction heating has been adapted to an inductively coupled plasma CVD reactor. Design of low pass and high pass filters has be made in order to prevent interference of the two frequencies : 13.56 MHz far plasma generation and 150 kHz for heating. Ion current densities have been measured in a large pressure range : large ionic current can be obtained at an optimum pressure of 13 Pa (100 mTorr). Preliminary deposition tests of W from WF6/H-2 have been made. A deposition rate of up to 6 mu m/h can be obtained. W films have a columnar microstructure with a strong 111 texture. Lack of contamination by F was verified.
Keywords:EQUIVALENT-CIRCUIT