SrTiO3 films were prepared on (100)Pt//(100)MgO and (111)Pt/glass substrates by CVD using Sr(C11H19O2)(2)-Ti(O . i-C3H7)(4)-O-2 system. Epitaxially grown film was deposited on (100)Pt//(100)MgO substrate at 800 degrees C, (100)SrTiO3//(100)Pt//(100)MgO. On the other hand, (110)-one axis oriented film was deposited on (111)Pt/glass substrate. These films were made up of columnar grains grown normal to the surface of the substrate. The dielectric constant (epsilon(r)) of these films were approx. 220-240 and decreased to 90% with increasing temperature from 20 to 130 degrees C. Their dispersion factors were within 0.5-1.5%. The epsilon(r) of the films deposited at 730 degrees C was approx. 30 for both films and was approximately one-seventh smaller than that deposited at 800 degrees C.