Effects of annealing temperature on the structure of amorphous hydrogenated silicon carbide (a-SiC:H) films prepared by a reactive sputtering method are investigated by using infrared transmission, Raman scattering and X-ray diffraction techniques. It is found that an annealing process results in structural rearrangement and evacuation of hydrogen atoms from CHn, and SiHn bonds. The amorphous phase transforms into the microcrystalline 6H-SiC phase at an annealing temperature of approximately 1073 K, lower than the transformation temperature of 1473 K for a-SiC:H films deposited by chemical vapor deposition methods.