화학공학소재연구정보센터
Thin Solid Films, Vol.335, No.1-2, 253-257, 1998
Spectroscopic ellipsometry on silicon-oxide films on silicon
We present ellipsometric investigations performed within the spectral range 2 less than or equal to <(h)over bar omega> less than or equal to 4 eV on samples with film thicknesses h below 30 nm. The calculated thicknesses are dependent on the supposed model and on the wavelength. The discussion shows the sensitivity of h against the variation of the input data and throws some light on difficulties with this essential parameter for nanoscale devices.