The crystallization evolution of boron and phosphorus doped amorphous Si1-xGex films (5 x 10(17)-5 x 10(20) cm(-3)), deposited on SiO2/Si(001) substrates by molecular beam in high vacuum at room temperature, were studied by XRD, TEM and SEM. The amorphous Si1-xGex films were fully crystallized at similar to 600 degrees C. Up to 800 degrees C no morphology changes were observed. Between 800 and 950 degrees C, voids and hillocks: were gradually developed in the films. which consequently collapsed. The Hall concentration and mobility were characterized in the Si1-xGex films, annealed between 600 and 800 degrees C. The mobility and conductivity of p-Si0.5Ge0.5 films at room temperature were found to be relative high: 60 cm(2)/V s and 2000 (Omega cm)(-1), respectively.