UV detectors based on a-Si:H/a-SiC:H were deposited by plasma enhanced chemical vapor deposition and characterized in terms of their photoelectrical properties, A quantum efficiency of 90%. corresponding to 0.28 A/W, at 365 nm was measured for devices having p-layer and i-layer thickness less than 10 nm. A good uniformity (15%) was achieved on area of 5 x 5 cm, A linear dependence of the photocurrent as a function of impinging photon flux, corresponding to a constant responsivity, was found, Aging experiments were performed by UV irradiation both on devices and on thin films inserted in the detectors with the aim of investigating the possible correlations.