We report a new pulsed laser deposition technique named radio frequency (RF) plasma activated pulsed laser deposition. La2-xSrxCuO4 (x = 0.15) films were deposited by this method, The results of scanning electronic microscopy and atomic force microscopy observations show that particles and droplets that are usually induced by means of a normal pulsed laser deposition method are effectively reduced. Moreover, stable superconductive La2-xSrxCuO4 films can be obtained at conditions of substrate temperature 650 degrees C and at oxygen gas pressure 6.6 Pa, Based on the RF plasma process knowledge, a qualitative analysis is given to explain the observed experimental results.